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APTCV90TL12T3G
Three level inverter CoolMOS & Trench + Field Stop IGBT4 Power Module
Trench & Field Stop IGBT4 Q2, Q3: VCES = 1200V ; IC = 50A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 900V ; ID = 23A @ Tc = 80C
Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses * * * * *
28 27 26 25 29 30 23 22 20 19 18 16 15
Q1, Q4 CoolMOSTM Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 ...
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-9
APTCV90TL12T3G - Rev 0
All ratings @ Tj = 25C unless otherwise specified
March, 2009
APTCV90TL12T3G
Q1 & Q4 Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 900 30 23 75 20 120 250 8.8 2.9 1940 Unit V A V m W A mJ
Tc = 25C
Q1 & Q4 Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V
Min Tj = 25C Tj = 125C 2.5
Typ 500 100 3
Max 100 120 3.5 100
Unit A m V nA
VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
Q1 & Q4 Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf RthJC Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Junction to Case Thermal resistance
Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 26A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 26A RG = 7.5
Min
Typ 6800 330 270 32 115 70 20 400 25
Max
Unit pF
nC
ns
0.5
C/W
Q2 & Q3 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 1200 80 60 100 20 280 100A @ 1100V Unit V A V W
March, 2009 2-9 APTCV90TL12T3G - Rev 0
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APTCV90TL12T3G
Q2 & Q3 Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 50A Tj = 150C VGE = VCE , IC = 1.6mA VGE = 20V, VCE = 0V Min Typ 1.8 2.2 5.8 Max 1 2.2 6.5 400 Unit mA V V nA
5.0
Q2 & Q3 Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=50A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 50A RG = 8.2 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 50A RG = 8.2 TJ = 25C VGE = 15V VCE = 600V TJ = 150C IC = 50A TJ = 25C RG = 8.2 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 2770 205 160 0.38 50 27 270 70 50 30 290 80 3.8 5.5 2.5 4.5 200 0.53 ns Max Unit pF C
ns
mJ mJ A C/W
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3-9
APTCV90TL12T3G - Rev 0
March, 2009
APTCV90TL12T3G
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 40A IF = 80A IF = 40A IF = 40A VR = 667V IF = 40A VR = 667V Test Conditions VR=1000V Tj = 25C Tj = 125C Tc = 80C Min 1000 Typ Max 100 500 40 2.5 3.1 2 250 315 415 1650 1.3 1.2 3 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
CR2, CR3, CR7 & CR8 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V IF = 30A VR = 800V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 40 2.6 3.2 1.8 300 380 360 1700 1.6 1.2 3.1 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B
March, 2009 4-9 APTCV90TL12T3G - Rev 0
Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
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APTCV90TL12T3G
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 175* 125 100 4.7 110
Unit V C N.m g
* Tjmax = 150C for Q1 & Q4
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q2 & Q3 Typical performance curve
Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60
VCE=600V D=50% R G=8.2 50C T J=1 Tc=75C
40 30 20 10 0 10 20 30 40 50 IC (A) 60
Hard switching
70
80
90
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5-9
APTCV90TL12T3G - Rev 0
March, 2009
50
17 12
28
APTCV90TL12T3G
100 80 IC (A) 60 40 20 0 0 1 2 VCE (V) 3 4 Output Characteristics (VGE=15V) Output Characteristics 100 TJ = 150C
TJ=25C TJ=150C
80 60 IC (A) 40 20 0 0 1
VGE=19V VGE=15V
VGE=9V
2 VCE (V)
3
4
100 80 60
Transfert Characteristics
TJ=25C
20 16 12 E (mJ) 8
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 8.2 TJ = 150C
Eon
IC (A)
40 20 0 5 6 7 8 9 10 11 12 13 VGE (V) Switching Energy Losses vs Gate Resistance 12 10
Eon
TJ=150C
Eoff
4 0 0 20 40 60 IC (A) Reverse Bias Safe Operating Area 120 100
VCE = 600V VGE =15V IC = 50A TJ = 150C
80
100
E (mJ)
IC (A)
8 6 4 2 0
80 60 40 20 0
VGE=15V TJ=150C RG=8.2
Eoff
10 20 30 Gate Resistance (ohms)
40
0
300
600 900 VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse
rectangular Pulse Duration (Seconds)
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6-9
APTCV90TL12T3G - Rev 0
0 0.00001
0.0001
0.001
0.01
0.1
1
10
March, 2009
APTCV90TL12T3G
Q1 & Q4 Typical performance curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=20, 8V
80
6V
BVDSS, Drain to Source Breakdown Voltage
120 ID, Drain Current (A)
Breakdown Voltage vs Temperature 1000 975 950 925 900 25 50 75 100 125 TJ, Junction Temperature (C) DC Drain Current vs Case Temperature 35 ID, DC Drain Current (A) 30 25 20 15 10 5 0 25 50 75 100 125 TC, Case Temperature (C) 150
5V
40
0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 1000 ID, Drain Current (A) 20
100
limited by RDSon
100 s
10
10 ms
1
Single pulse TJ=150C TC=25C 1 10 100 1000
0.1 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 10000 1000 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Ciss 10 8 6 4 2 0
Gate Charge vs Gate to Source Voltage VDS=720V ID=26A TJ=25C
0
50
100 150 200 Gate Charge (nC)
250
300
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7-9
APTCV90TL12T3G - Rev 0
March, 2009
Coss
APTCV90TL12T3G
CR5 & CR6 Typical performance curve
Forward Current vs Forward Voltage 80 IF, Forward Current (A)
TJ=125C
60
40
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Energy losses vs Collector Current 2 1.6 E (mJ) E (mJ) 1.2 0.8 0.4 0 0 20 40 IC (A) 60 80
VCE = 667V VGE = 15V RG = 5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1.4 1.2 1 0.8 0.6 0 10 20 30 Gate resistance (ohms)
VCE = 667V VGE =15V IC = 40A TJ = 125C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0 0.00001
0.01
0.1
1
10
March, 2009 8-9 APTCV90TL12T3G - Rev 0
Rectangular Pulse Duration (Seconds)
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APTCV90TL12T3G
CR2, CR3, CR7 & CR8 Typical performance curve
Forward Current vs Forward Voltage 80 IF, Forward Current (A)
TJ=125C
60
40
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Energy losses vs Collector Current 2.5 2 E (mJ) E (mJ) 1.5 1 0.5 0 0 20 40 IC (A) 60 80
VCE = 800V VGE = 15V RG = 5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1.8 1.6 1.4 1.2 1 0.8 0.6 0 10 20 30 Gate resistance (ohms)
VCE = 800V VGE =15V IC = 30A TJ = 125C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0 0.00001
0.01
0.1
1
10
March, 2009 9-9 APTCV90TL12T3G - Rev 0
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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